Coupled Lorenz systems, cusp maps, and the lowering of the second laser thresholdLAWANDY, N. M; PLANT, D. V; LEE, K et al.Physical review. A, General physics. 1986, Vol 34, Num 2, pp 1247-1250, issn 0556-2791Article

Paramètres du schéma équivalent des hétérolasers pour des courants inférieurs au seuilKARIKH, E. D; SHILOV, A. F.Izvestiâ vysših učebnyh zavedenij. Radiofizika. 1984, Vol 27, Num 4, pp 441-449, issn 0021-3462Article

Near-threshold photoionisation theory for diatomic moleculesGOLUBKOV, G. V; IVANOV, G. K.Journal of physics. B. Atomic and molecular physics. 1984, Vol 17, Num 5, pp 747-761, issn 0022-3700Article

Semiclassical calculations of (Z+e^-+e⁺) energy spectraGRUJIC, P. V.The Journal of chemical physics. 1984, Vol 80, Num 12, pp 6165-6169, issn 0021-9606Article

Threshold variations in diode lasers induced by external resonator feedbackGOODWIN, J. C; GARSIDE, B. K.IEEE journal of quantum electronics. 1983, Vol 19, Num 10, pp 1492-1495, issn 0018-9197Article

Low threshold ridge waveguide laser at 1.55 μmKAMINOW, I. P; STULZ, L. W; KO, J.-S et al.Electronics Letters. 1983, Vol 19, Num 21, pp 877-879, issn 0013-5194Article

Photoionisation of atomic fluorineRUSCIC, B; GREENE, J. P; BERKOWITZ, J et al.Journal of physics. B. Atomic and molecular physics. 1984, Vol 17, Num 4, pp L79-L83, issn 0022-3700Article

Measurements of threshold carrier density of III-V semiconductor laser diodesSU, C. B; OLSHANSKY, R.Applied physics letters. 1983, Vol 43, Num 9, pp 856-858, issn 0003-6951Article

Threshold currents for AlGaAs quantum well lasersSUGIMURA, A.IEEE journal of quantum electronics. 1984, Vol 20, Num 4, pp 336-343, issn 0018-9197Article

The photoionisation of the Si⁺ (²P°) ground state: a combined application of the R-matrix and quantum defect theoriesTAYLOR, K. T; ZEIPPEN, C. J; LE DOURNEUF, M et al.Journal of physics. B. Atomic and molecular physics. 1984, Vol 17, Num 6, pp L157-L163, issn 0022-3700Article

Nonexponential decay in autoionization near thresholdDRUGER, S. D; SAMUEL, M. A.Physical review. A, General physics. 1984, Vol 30, Num 1, pp 640-643, issn 0556-2791Article

Temperature dependence of threshold current of injection lasers for short pulse excitationDUTTA, N. K; OLSSON, N. A; HERITAGE, J. P et al.Applied physics letters. 1984, Vol 44, Num 10, pp 943-944, issn 0003-6951Article

Temperature dependence of threshold current in III-V semiconductor lasers: experimental prediction and explanationSU, C. B; OLSHANSKY, R; MANNING, J et al.Applied physics letters. 1984, Vol 44, Num 11, pp 1030-1032, issn 0003-6951Article

Influence of doping on threshold current of semiconductor lasersHAUG, A.Electronics Letters. 1985, Vol 21, Num 18, pp 792-794, issn 0013-5194Article

Threshold analysis of cleaved-coupled-cavity lasersSTREIFER, W; YEVICK, D; BURNHAM, R. D et al.Applied physics letters. 1984, Vol 45, Num 4, pp 343-345, issn 0003-6951Article

A critique of semiempirical formulae for the sputtering yield near threshold energyZALM, P. C.Radiation effects. 1983, Vol 86, Num 1, pp 29-34, issn 0033-7579Article

Beam-propagation analysis of stripe-geometry semiconductor lasers: threshold behaviorAGRAWAL, G. P; JOYCE, W. B; DIXON, R. W et al.Applied physics letters. 1983, Vol 43, Num 1, pp 11-13, issn 0003-6951Article

TEMPERATURE DEPENDENCE OF THE BAND GAP AND COMPARISON WITH THE THRESHOLD FREQUENCY OF PURE GAAS LASERS.CAMASSEL J; AUVERGNE D; MATHIEU H et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 6; PP. 2683-2689; BIBL. 36 REF.Article

CARACTERISTIQUES DE SEUIL D'UN LASER A COLORANT POMPE PAR METHODE A DOUBLE IMPULSIONSTEFANOV VJ; NENCHEV MN.1975; BULG. J. PHYS.; BULG.; DA. 1975; VOL. 2; NO 4; PP. 380-389; ABS. ANGL.; BIBL. 9 REF.Article

THRESHOLDS AND RESONANCES IN A THREE-BODY MODELLOVAS I; DENES E.1973; PHYS. REV., C; U.S.A.; DA. 1973; VOL. 7; NO 3; PP. 937-942; BIBL. 16 REF.Serial Issue

STATIONARY SOLUTION OF A LASER OSCILLATOR WITH SPATIAL DISPERSION.SPALEK J.1975; PHYS. LETTERS, A; NETHERL.; DA. 1975; VOL. 51; NO 4; PP. 235-236; BIBL. 5 REF.Article

CRITICAL FLUCTUAT ON OF A SYSTEM HAVING THIRD-ORDER NONLINEARITY NEAR THRESHOLD.AGU M; TERAMACHI Y.1974; PHYS. LETTERS, A; NETHERL.; DA. 1974; VOL. 50; NO 3; PP. 231-232; BIBL. 7 REF.Article

Multichannel decay and continuum-continuum transitions in above-threshold ionisationLEWENSTEIN, M; MOSTOWSKI, J; TRIPPENBACH, M et al.Journal of physics. B. Atomic and molecular physics. 1985, Vol 18, Num 14, pp L461-L466, issn 0022-3700Article

Multiphoton absorption above ionization threshold by atoms in strong laser fieldsDENG, Z; EBERLY, J. H.Journal of the Optical Society of America. B, Optical physics (Print). 1985, Vol 2, Num 3, pp 486-493, issn 0740-3224Article

Effect of active layer placement on the threshold current of 1.3-μm InGaAsP etched mesa buried heterostructure lasersDUTTA, N. K; NELSON, R. J; WILSON, R. B et al.Applied physics letters. 1984, Vol 45, Num 4, pp 337-339, issn 0003-6951Article